Influence of sidewall spacer on threshold voltage of MOSFET with high-k: gate dielectric

J.P. Xu; F. Ji; P.T. Lai; J.G. Guan

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Influence of sidewall spacer on threshold voltage of MOSFET with high-k: gate dielectric

机译：侧壁隔离层对高k栅极MOSFET阈值电压的影响

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In this paper, an analytical expression of the gate-dielectric fringing-potential distribution is derived for high-k gate-dielectric MOSFET through a conformal-mapping transformation method for the first time. Based on the fringing-potential distribution,

机译：本文首次通过保形映射变换方法推导了高k栅介质MOSFET的栅介质边缘电位分布的解析表达式。根据边缘电位分布，

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《Microelectronics reliability》 |2008年第2期|181-186|共6页
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J.P. Xu; F. Ji; P.T. Lai; J.G. Guan;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
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正文语种 eng
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Influence of sidewall spacer on threshold voltage of MOSFET with high-k: gate dielectric

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