...
首页> 外文期刊>Microelectronics reliability >Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling
【24h】

Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling

机译:通过子模型研究不同通孔形式的铜通孔结构通孔底部的应力分布

获取原文
获取原文并翻译 | 示例
           

摘要

In ULSI multilevel metallizations the via bottom is the main region for the appearance of local stress. This local stress can lead to fractures or porous spots. Out of this concerning the local stress distribution the via bottom region has to be investigated. Due to various technological processes the via shape especially the via bottom geometries are different. In this paper FE-Simulations with respect to the different via bottom geometries and different temperatures of the process steps will be presented. The best via bottom geometry is figured out. The submodeling technique in ANSYS~® is used for these investigations for reduction of simulation time and precise results. The thickness of the barrier has also an influence on the mechanical stress and will be also investigated.
机译:在ULSI多级金属化中,通孔底部是出现局部应力的主要区域。这种局部应力会导致破裂或多孔斑点。由于这与局部应力分布有关,必须研究通孔底部区域。由于各种工艺过程,通孔形状,尤其是通孔底部的几何形状是不同的。在本文中,将针对不同的通孔底部几何形状和工艺步骤的不同温度进行有限元仿真。找出了最佳的通孔底部几何形状。 ANSYS〜®中的子建模技术用于这些研究,以减少仿真时间并获得精确的结果。阻挡层的厚度也对机械应力有影响,并且还将进行研究。

著录项

  • 来源
    《Microelectronics reliability》 |2009年第11期|1090-1095|共6页
  • 作者单位

    Laboratorium fuer Informationstechnologie, Leibniz Universittaet, Hannover, Germany;

    Laboratorium fuer Informationstechnologie, Leibniz Universittaet, Hannover, Germany;

    GLOBALFOUNDRIES Inc., Wilschdorfer Landtrasse 101, 01109 Dresden, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号