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1300 V, 2 ms pulse inductive load switching test circuit with 20 ns selectable crowbar intervention

机译:1300 V,2 ms脉冲电感性负载切换测试电路,具有20 ns可选撬棒干预

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摘要

A non destructive inductive load switching (ILS) test apparatus with the capability of delivering high current pulses with a maximum 2 ms duration under a 1300 V supply is presented in this work. The system is also provided with a fast crowbar whose intervention is programmable with a 20 ns resolution and is intended to perform tests on power devices driving generic inductive loads. This kind of test is commonly used for quality control and prototype verification in power devices industry [Busatto G, Cascone B, Fra-telli L, Balsamo M, Iannuzzo F, Velardi F. Non-destructive high temperature characterization of high-voltage IGBTs. Microelectron Reliab 2002;42(9-11):1635-40]. The high resolution crowbar intervention allows an immediate steering of the current away from the Device Under Test (DUT) after the failure event. In this way device damage is minimized so as to have a better understanding of the exact position of the failure, an essential parameter to infer the reasons that caused it [Trivedi M, Shenai K. Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress. IEEE Trans Power Electron 1999;14(1):108-16; Breglio G, Irace A, Riccio M, Spirito P, Hamada K, Nishijima T, et al. Detection of localized UIS failure on IGBTs with the aid of lock-in thermography. Microelectron Reliab 2008;48(8-9): 1432-4].
机译:这项工作提出了一种无损感性负载切换(ILS)测试设备,该设备能够在1300 V电源下以最大2 ms的持续时间传送高电流脉冲。该系统还配备了一个快速撬棍,该撬棍的干预可编程为20 ns分辨率,旨在对驱动一般感性负载的功率器件进行测试。这种测试通常用于功率设备行业中的质量控制和原型验证[Busatto G,Cascone B,Fra-telli L,Balsamo M,Iannuzzo F,VelardiF。高压IGBT的无损高温表征。 Microelectron Reliab 2002; 42(9-11):1635-40]。高分辨率撬棍干预可在发生故障事件后立即将电流从被测设备(DUT)引开。通过这种方式,可以将设备损坏减至最小,从而更好地了解故障的确切位置,这是推断导致故障的原因的基本参数[Trivedi M,ShenaiK。短路和钳位感性下IGBT的故障机理切换压力。 IEEE Trans Power Electron 1999; 14(1):108-16; Breglio G,Irace A,Riccio M,Spirito P,Hamada K,Nishijima T等。借助锁定热成像技术检测IGBT上的局部UIS故障。 Microelectron Reliab 2008; 48(8-9):1432-4]。

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  • 来源
    《Microelectronics reliability》 |2009年第11期|1386-1390|共5页
  • 作者单位

    Universita degli Studi Ax Napoli 'Federico II' Dipartimento di Ingegneria Biomedica Elettronica e delle Telecomunicazioni, via Claudio 21, Napoli, Italy;

    Universita degli Studi Ax Napoli 'Federico II' Dipartimento di Ingegneria Biomedica Elettronica e delle Telecomunicazioni, via Claudio 21, Napoli, Italy;

    Universita degli Studi Ax Napoli 'Federico II' Dipartimento di Ingegneria Biomedica Elettronica e delle Telecomunicazioni, via Claudio 21, Napoli, Italy;

    Universita degli Studi Ax Napoli 'Federico II' Dipartimento di Ingegneria Biomedica Elettronica e delle Telecomunicazioni, via Claudio 21, Napoli, Italy;

    Universita degli Studi Ax Napoli 'Federico II' Dipartimento di Ingegneria Biomedica Elettronica e delle Telecomunicazioni, via Claudio 21, Napoli, Italy;

    Universita degli Studi Ax Napoli 'Federico II' Dipartimento di Ingegneria Biomedica Elettronica e delle Telecomunicazioni, via Claudio 21, Napoli, Italy;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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