Instable mechanisms during unclamped operation of high power IGBT modules

摘要

The behaviour in terms of robustness during undamped operations of power IGBT modules is presented. The experimental characterization is aimed to identify the main instable phenomena during unclamped turn-off in power IGBT modules. Several devices of different generations, current and voltage ratings have been analyzed. Thanks to a non-destructive experimental set-up, it is possible to observe instable phenomena without causing the damage of the device under test. In this paper, it is shown that the destructive conditions during undamped operations are preceded by precursors on the gate side which indicate instable phenomena taking place inside the device. The dependence of the destructive phenomenon on the driver conditions are widely and exhaustively analyzed.