机译:累积模式Pi栅极pMOSFET中的NBTI和热载流子效应
Tyndall National Institute, Lee Maltings, Prospect Row, Cork. Ireland;
Tyndall National Institute, Lee Maltings, Prospect Row, Cork. Ireland;
Tyndall National Institute, Lee Maltings, Prospect Row, Cork. Ireland;
Tyndall National Institute, Lee Maltings, Prospect Row, Cork. Ireland;
Tyndall National Institute, Lee Maltings, Prospect Row, Cork. Ireland;
Tyndall National Institute, Lee Maltings, Prospect Row, Cork. Ireland;
Tyndall National Institute, Lee Maltings, Prospect Row, Cork. Ireland;
Department of Electronics Engineering, University of Incheon, #177 Dohwa-Dong Nam-Gu, Incheon 402-749, Republic of Korea;
机译:0.13μmPmosfets的最坏情况转换为Nbti和热载流子可靠性
机译:具有SiGe通道和嵌入式SiGe源/漏应力源的应变pMOSFET的特性和热载流子效应
机译:热载流子效应与纳米SOI pMOSFET中硅膜厚度的关系
机译:反相模式和累积模式完全耗尽SOI MOSFET中热载流子退化效应的比较
机译:具有氧氮化物栅极电介质的p + -poly PMOSFET中的热孔退化和负偏压温度不稳定性(NBTI)增强。
机译:栅堆叠结构和工艺缺陷对32 nm工艺节点PMOSFET中NBTI可靠性的高k介电依赖性的影响
机译:在改进的晶片上制造的130nm部分耗尽的SOI PMOSFET中由热载体注射诱导的降解