Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications

摘要

Due to their excellent scalability and better immunity to short channel effects, double-gate (DG) MOSFETs are being earnestly assessed for CMOS applications beyond the 70 nm node of the SIA roadmap. However for channel lengths below 100 nm, DG MOSFETs still show considerable threshold voltage roll off and to overcome this effect, different gate or channel engineering techniques can be widely used. In this paper, the analog and RF performance of a single halo double gate MOSFET implemented with dual-material gate (DMG) technology is investigated with 2D device simulator. This novel structure shows better immunity to short-channel effects like DIBL and improved analog and RF performance. Moreover they exhibit better suppression of hot carrier effect and higher carrier transport efficiency than a single halo double gate MOSFET. The suitability of nanoscale single halo double gate MOSFETs with dual-material gate for circuit applications is examined by comparing the performance of a two stage cascode amplifier and a greater improvement is observed for single halo dual-material DG MOSFET compared to that of the single halo counterpart.