Measuring stress next to Au ball bond during high temperature aging

摘要

A real-time signal of the stress caused by a ball bond is recorded during long-term high temperature storage (HTS) without destroying the ball bond, using a piezoresistive integrated CMOS microsensor located next to the Al bond pad (test pad) on a test chip. The sensor is sensitive to in-plane shear stress changes Δτ_(xy) that arise due to tensile or compressive stress at the test pad. While performing HTS at 200 ℃ during 400 h, significantly different stress signals are observed with a ball bond (test structure) compared to those observed without a ball bond (reference structure). Simultaneous to Δτ_(xy) the contact resistance of the bond was directly measured with a four-wire method in which two connection paths lead to the test pad and a second wire bond is made on top of the test ball bond. The contact resistance values measured at room temperature (25 ℃) before and after HTS are 2.1 mΩ and 6.1 mΩ, respectively. Effects influencing the stress signal during HTS include volume changes by the growth of intermetallics. The stress increase initially observed during HTS shows bond shrinking corresponding to growth of Au-rich phases which was previously reported to result in volume shrinkage. A subsequent phase of signal drop is observed starting after 200 h, indicating the presence of a different mechanism partly reducing the stress built up previously, and attributed to lateral growth of Al-rich intermetallics, partially consuming the pad Al outside the bond region, and resulting in volume expansion. Finite element models are developed to support the interpretation of the stress signal features. One of the models simulates the shrinking of Au-Al material due to phase transformation. When calibrated to experimental data, the peak underpad Tresca stress level generated during such contraction is 53 MPa, located 2.4 μm inside of the 55 μm diameter bond zone.