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Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism

机译:主动抗粘滞热基机制提高RF-MEMS开关可靠性

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摘要

MicroElectroMechanical Systems for Radio Frequency applications (i.e. RF-MEMS) show very good performance and characteristics. However, their employment within large-scale commercial applications is still limited by issues related to the reliability of such components. In this work we present the Finite Element Method (FEM) modelling and preliminary experimental results concerning an active restoring mechanism, embedded within conventional MEMS/RF-MEMS ohmic (and capacitive) relays, capable of retrieving the normal operation of the switch if stiction occurs (i.e. the missed release of an actuated switch when the controlling bias is removed). The mechanism exploits the heat generated by an electric current flowing through an high-resistivity poly-silicon serpentine (Joule effect), to induce deformations in the suspended MEMS structures. Such changes in the mechanical structure result in shear and vertical restoring forces, helping the membrane release. The FEM-based thermo-electromechanical simulations discussed in this work include the coupling between different physical domains, starting from the imposed current, to the MEMS deformation. The preliminary experimental data reported in this paper show a speed-up of the dielectric discharge time due to the generated heat, as well as a change in the S-parameters, due to the membrane expansion, compatible with an upward bending of the central contact (i.e. restoring force), useful to counteracting stiction due to micro-welding.
机译:用于射频应用的微机电系统(即RF-MEMS)具有很好的性能和特性。但是,它们在大规模商业应用中的使用仍然受到与此类组件的可靠性有关的问题的限制。在这项工作中,我们介绍了有关有源恢复机制的有限元方法(FEM)建模和初步实验结果,该机制嵌入在常规MEMS / RF-MEMS欧姆(和电容)继电器中,如果发生静摩擦,则能够恢复开关的正常运行(即,在取消控制偏置时错过了操作开关的释放)。该机制利用流过高电阻率多晶硅蛇形管(焦耳效应)的电流产生的热量,在悬浮的MEMS结构中引起变形。机械结构的这种变化会导致剪切力和垂直恢复力,从而帮助膜释放。在这项工作中讨论的基于FEM的热机电模拟包括从施加电流开始到MEMS变形的不同物理域之间的耦合。本文报道的初步实验数据表明,由于产生的热量,电介质放电时间加快,并且由于膜膨胀,S参数发生了变化,与中心触点的向上弯曲兼容(即恢复力),用于抵消由于微焊接而产生的静摩擦。

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  • 来源
    《Microelectronics & Reliability》 |2010年第11期|p.1599-1603|共5页
  • 作者单位

    Mems Research Unit, Fondazione Bruno Kessler - FBK, Via Sommarive 18, 38123 Povo, Trento, Italy;

    rnMems Research Unit, Fondazione Bruno Kessler - FBK, Via Sommarive 18, 38123 Povo, Trento, Italy Dipanimento di Ingegneria e Scienza dell'Informazione (DISI), University of Trento, Via Sommarive 14, 38123 Povo, Trento, Italy;

    rnMems Research Unit, Fondazione Bruno Kessler - FBK, Via Sommarive 18, 38123 Povo, Trento, Italy;

    rnDepartment of Information Engineering, University of Padova, Via Gradenigo 6/b, 35131 Padova, Italy;

    rnDepartment of Information Engineering, University of Padova, Via Gradenigo 6/b, 35131 Padova, Italy;

    rnDipanimento di Ingegneria e Scienza dell'Informazione (DISI), University of Trento, Via Sommarive 14, 38123 Povo, Trento, Italy;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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