Thermal aging model of InP/InGaAs/InP DHBT

摘要

This paper presents the measurement result and modeling of the storage accelerated aging tests performed on InP/lnGaAs/lnP DHBT. From the Gummel characteristics, we observe that the principle mode of device degradation results from the increase of base current and reduction in the current gain which comes from the base-emitter junction periphery. Topics covered include: (1) underlying physical mechanism of base current degradation; (2) choosing HICUM model LEVEL2 for the modeling purpose; (3) evolution of model parameters with stress time after the extraction of model parameter before aging and the description of the parameter drift with suitable equation; (4) implementation in compact electrical model allows to simulate the impact of device failure mechanisms on the circuit in operating conditions.