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机译:利用栅极-漏极和栅极-源极的反向偏置应力对GaN HEMT进行实验和模拟的dc退化
Department of Information Engineering, University of Modena and Reggio Emilia, Strada Vignolese 905,1-41125 Modena MO, Italy;
rnDepartment of Information Engineering, University of Modena and Reggio Emilia, Strada Vignolese 905,1-41125 Modena MO, Italy;
rnDepartment of Information Engineering, University of Modena and Reggio Emilia, Strada Vignolese 905,1-41125 Modena MO, Italy;
Department of Information Engineering, University of Padova, Via Gradenigo 6/B, 1-35131 Padova PD, Italy;
rnDepartment of Information Engineering, University of Padova, Via Gradenigo 6/B, 1-35131 Padova PD, Italy;
rnDepartment of Information Engineering, University of Modena and Reggio Emilia, Strada Vignolese 905,1-41125 Modena MO, Italy;
rnDepartment of Information Engineering, University of Modena and Reggio Emilia, Strada Vignolese 905,1-41125 Modena MO, Italy;
机译:关于反向偏置应力AlGaN / GaN HEMT中电参数退化的不同原因
机译:AlGaN / GaN HEMT器件的降解:反向偏置和热电子应力的作用
机译:未钝化GaN / AlGaN / GaN / SiC HEMT的低电流色散和低偏置应力退化
机译:高温反向偏压(HTRB)应力对AlGaN / GaN HEMT退化的影响
机译:机械应力对AlGaN / GaN HEMT性能的影响:沟道电阻和栅极电流。
机译:基于PD-Algan / GaN HEMTS栅极偏压调制的二氧化氮气体传感器性能优化
机译:逆偏压下冷气温逆偏压下逆偏压下逆压电效应及捕集效应的研究