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机译:AlGaN / GaN HEMT中的电流塌陷效应分析:实验和数值模拟
IMS Laboratory. Universite Bordeaux 1,351 cours de la liberation, 33405 Talence Cedex, France Department of Information Engineering, University ofModena and Reggio Emilia, Modena, Italy;
rnIMS Laboratory. Universite Bordeaux 1,351 cours de la liberation, 33405 Talence Cedex. France TRT-France-LATPI, Route dipartementale 128. 91767 Palaiseau Cedex, France;
rnIMS Laboratory. Universite Bordeaux 1,351 cours de la liberation, 33405 Talence Cedex. France;
rnIMS Laboratory. Universite Bordeaux 1,351 cours de la liberation, 33405 Talence Cedex. France;
rnTRT-France-LATPI, Route dipartementale 128, 91767 Palaiseau Cedex, France;
rnUnited Monolithic Semiconductors, Domaine de Corbeville, 91404 Orsay Cedex, France;
rnDepartment of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy;
rnDepartment of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy;
机译:分析场板对GaN MESFET和AlGaN / GaN HEMT中与缓冲器相关的滞后现象和电流崩溃的影响
机译:AlGaN / GaN / Si中的高沟道电导率,击穿场强和低电流塌陷
机译:使用AlGaN / GaN / AlGaN双异质结构抑制增强模式基于GaN的HEMT中的电流崩塌
机译:单(AlGaN / GaN)和双(AlGaN / GaN / AlGaN)异质增强模式Hemts的研究
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:二维电子气上的供体样表面陷阱以及AlGaN / GaN HEMT的电流崩塌
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明
机译:用于减少alGaN / GaN高电子迁移率晶体管(HEmT)中电流崩塌的表面钝化膜的比较