Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing

摘要

Because of its advantages (reduction of thickness, improvement of the signal delay and of the thermal dissipation...), Cu/low-k technologies are more and more used for RF applications in semiconductor industry. The failure analysis of such devices becomes a new challenge. This paper deals with a failure analysis case study on copper and low-k dielectric structure encapsulated in a plastic package. It shows the limitations of the techniques used in a standard failure analysis flow and presents a new sample preparation combining laser package ablation and specific RIE process for front-side decapsulation. This innovative sample preparation flow has been found mandatory for solving the failure analysis case: it was demonstrated that there was not any defect at the surface of the die and this method enabled the access to an EOS defect located between two metal layers.