Experimental electro-mechanical static characterization of IGBT bare die under controlled temperature

摘要

Silicon dice soldered in power assemblies have to withstand simultaneously electrical, thermal and mechanical stress. Mechanical stress is an important issue because it will directly impact on both the device behavior and power modules reliability. This paper focuses on the electro-mechanical static characterization of a planar gate IGBT by the help of experiments at controlled temperatures. A specific test bench is proposed to make the experiments on silicone bare dice. It can be highlighted that mechanical stresses have a strong influence on the electrical characteristics of IGBT and this effect is independent from the die temperature. These properties might be a key point to point out an early failure indicator to improve design of the power module.