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机译:Cu / Low-k互连在改善电迁移中储层长度有效性的宽度依赖性
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore United Microelectronics Corporation (UMC) Singapore Branch, No. 4, Pasir Ris Drive 12, Singapore 519528, Singapore;
rnSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore;
rnUnited Microelectronics Corporation (UMC) Singapore Branch, No. 4, Pasir Ris Drive 12, Singapore 519528, Singapore;
rnUnited Microelectronics Corporation (UMC) Singapore Branch, No. 4, Pasir Ris Drive 12, Singapore 519528, Singapore;
机译:双镶嵌铜互连的电迁移行为-结构,宽度和长度依赖性
机译:Cu / low-k半导体互连的电迁移和应力消除-65 nm互连技术及其他
机译:Cu / low-k半导体互连的电迁移和应力消除-65 nm互连技术及其他
机译:Cu / Low-k互连的电迁移线宽度依赖性的统计研究
机译:研究铜/低k互连中的应力松弛和电迁移。
机译:用于进一步缩小超大型集成器件-Cu互连的等离子增强化学气相沉积SiCH膜的低k覆盖层的材料设计
机译:大马士革铜互连线电迁移损伤的取向和微观结构依赖性