Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD)

摘要

The planar edge termination technique of junction termination extension (JTE) was investigated and optimized by using a two-dimensional device simulator. Particular attention was paid to achieve the least electrical field at the silicon/oxide interface of JTE region in order to decrease the surface charges sensitivity and then the reliability of the structure.