...
首页> 外文期刊>Microelectronics & Reliability >Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization
【24h】

Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization

机译:具有厚铜金属化的n和p沟道LDMOS的单脉冲能量能力和故障模式

获取原文
获取原文并翻译 | 示例

摘要

Electro-thermal destruction of n- and p-channel lateral double-diffused MOS in smart power ICs is investigated by electrical pulse experiments, simulations and failure analysis. It was observed experimentally and by TCAD simulation that the location of the hot spot plays very important role for single pulse energy capability. Damage both in silicon and copper metallization was observed. The n-DMOS exhibits better energy capability compared to p-DMOS due to better cooling efficiency of silicon area by the copper metallization. Effect of drift region length, doping profile and of copper metal thickness on energy capability is also analyzed.
机译:通过电脉冲实验,仿真和故障分析,研究了智能功率IC中n沟道和p沟道横向双扩散MOS的电热破坏。通过实验和TCAD模拟观察到,热点的位置对于单脉冲能量功能起着非常重要的作用。观察到硅和铜金属化均受损。与n-DMOS相比,n-DMOS具有更好的能量承受能力,这是由于铜金属化可改善硅区域的冷却效率。还分析了漂移区长度,掺杂分布和铜金属厚度对能量容量的影响。

著录项

  • 来源
    《Microelectronics & Reliability 》 |2010年第11期| p.1347-1351| 共5页
  • 作者单位

    Infineon Technologies, Am Campeon 1-12, 85579 Neubiberg, Germany Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria;

    rnInfineon Technologies, Am Campeon 1-12, 85579 Neubiberg, Germany;

    rnInfineon Technologies, Am Campeon 1-12, 85579 Neubiberg, Germany;

    rnInstitute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria;

    rnInstitute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria;

    rnInfineon Technologies, Am Campeon 1-12, 85579 Neubiberg, Germany;

    rnInfineon Technologies, Am Campeon 1-12, 85579 Neubiberg, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号