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Exciton wavefunction coupled surface plasmon resonance for In-rich InGaN film with perforated aluminum cylindrical micropillar arrays

机译:带有穿孔铝圆柱微柱阵列的In-In-InGaN薄膜的激子波函数耦合表面等离子体共振

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摘要

The optical characterization of excitons coupled with surface plasmon resonance (SPR) for InGaN/CaN heterostructures with perforated cylindrical micropillar arrays is investigated. We analyze the optical characteristics of excitons coupled with SPR for InCaN/GaN heterostructures with perforated cylindrical micropillars, as shown in measurements of the photoluminescence (PL) spectra over a broad range of temperatures between 20 and 300 K. From the temperature-dependent PL spectra, we observe the better SPR coupling effects, resulting in less carrier confinement in the InGaN energy band. The magnitude of the redshift of the emission peak shown by the sample with the coated aluminum (Al) pattern is larger than that shown by the sample with no metal film. This was due to the presence of more exciton coupling surface plasmons within the Al/InGaN interface. The enhancement of the PL intensity of the sample with the deposited Al pattern film can be attributed to a stronger SPR coupling interaction with the excitons. The experimental results indicate that a perforated Al cylindrical micropillar array can significantly affect carrier confinement, enhancing the quantum efficiency of Al/In-rich InGaN heterostructures due to the interaction of the SPR coupling effect between the InGaN quantum dot-like region and the Al film.
机译:研究了带孔圆柱微柱阵列的InGaN / CaN异质结构的激子的光学表征以及表面等离子体激元共振(SPR)。我们分析了带孔圆柱微柱的InCaN / GaN异质结构的激子与SPR耦合的光学特性,如在20至300 K的宽温度范围内的光致发光(PL)光谱测量所示。 ,我们观察到更好的SPR耦合效应,从而导致InGaN能带中的载流子限制更少。具有涂层铝(Al)图案的样品显示的发射峰的红移幅度大于没有金属膜的样品显示的发射峰的红移幅度。这是由于在Al / InGaN界面中存在更多的激子耦合表面等离子体激元。具有沉积的Al图案膜的样品的PL强度的增强可以归因于与激子的更强的SPR偶联相互作用。实验结果表明,由于InGaN量子点状区域与Al膜之间的SPR耦合作用的相互作用,穿孔的Al圆柱微柱阵列可以显着影响载流子约束,从而提高Al / In-InInGaN异质结构的量子效率。 。

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  • 来源
    《Microelectronics reliability》 |2010年第8期|P.1107-1110|共4页
  • 作者单位

    Department of Electrical Engineering, Technology and Science Institute of Northern Taiwan, Taipei 112, Taiwan, ROC;

    Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC;

    rnDepartment of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC;

    rnDepartment of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC;

    rnDepartment of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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