Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device

摘要

Temperature dependence of the interface state distribution due to hot carrier injection (HCI) effect in FinFET device is investigated in this paper. The interface state distribution along the FinFET channel at various temperatures is first extracted by measuring the generation-recombination (G-R) current and then the shift of interface state density with temperature is analyzed. The result shows that the density of interface states increases with elevating temperature from 28 ℃ to 128 ℃. While the change of generation rate slows down with rising temperature and the distribution region is insensitive to both stress time and temperature. Based on the measured data, an empirical Gaussian-like model is proposed to describe the interface state distribution along the FinFET channel and good agreements with experimental data are obtained.