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Interface delamination analysis of TQFP package during solder reflow

机译:回流焊期间TQFP封装的界面分层分析

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摘要

Interface delamination during solder reflow is a critical reliability problem for the plastic 1C packages. The main objective of this study is to apply modified virtual crack closure method (MVCCM) for the analysis of interface delamination between the leadframe pad and the encapsulant during a lead-free solder reflow after the level 1 moisture preconditioning. In this study, the moisture diffusion parameters and the coefficient of moisture expansion (CME) of two different epoxy molding compounds (EMC) are characterized for moisture diffusion analysis and the deformation analysis due to hygroscopic swelling. At the same time, the entire thermal and moisture history of Thin Quad Flat Pack (TQFP) package is simulated from the start of level 1 moisture preconditioning (85 ℃/85%RH for 168 h) to subsequent exposure to a lead-free solder reflow process. Finally, the transient development of the stress intensity factors due to thermal stress only K_t, hygrostress only K_h, vapor pressure only K_p and combined energy release rate G_(tot), are computed and studied by using MVCCM. Based on the calculated stress intensity factors and energy release rates, it seems that for the EMC, the Young's modulus, moisture diffusion coefficient, CME and adhesion strength with leadframe at high temperature appear to be the most significant variables for the MSL performance of TQFP package and this matches well with the experimental finding.
机译:焊料回流期间的界面分层对于塑料1C封装来说是至关重要的可靠性问题。这项研究的主要目的是应用改进的虚拟裂纹闭合方法(MVCCM)进行1级湿气预处理后无铅焊料回流期间引线框焊盘和密封剂之间的界面分层分析。在这项研究中,表征了两种不同的环氧模塑料(EMC)的水分扩散参数和水分膨胀系数(CME),以进行水分扩散分析和由于吸湿膨胀引起的变形分析。同时,从开始进行1级湿气预处理(85℃/ 85%RH 168小时)到随后暴露于无铅焊料中,模拟了四方扁平包装(TQFP)封装的整个热和湿气历史记录回流过程。最后,使用MVCCM计算并研究了仅因热应力,仅因湿润应力K_h,仅因蒸气压K_p和综合能量释放率G_(tot)引起的应力强度因子的瞬态发展。根据计算得出的应力强度因子和能量释放速率,看来对于EMC,高温下的杨氏模量,水分扩散系数,CME和与引线框架的粘合强度似乎是TQFP封装MSL性能的最重要变量。这与实验结果非常吻合。

著录项

  • 来源
    《Microelectronics reliability 》 |2010年第7期| P.1014-1020| 共7页
  • 作者单位

    ST Microelectronics, 629 Lorong 4/6 Toa Payoh, Singapore 319521, Singapore;

    ST Microelectronics, Via C. Olivetti 2, 20041 Agrate Brianza, Italy;

    ST Microelectronics, 629 Lorong 4/6 Toa Payoh, Singapore 319521, Singapore;

    ST Microelectronics, 629 Lorong 4/6 Toa Payoh, Singapore 319521, Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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