机译:具有高κHfO_xN_y栅极电介质的非晶InGaZnO金属-绝缘体-半导体电容器的改进的电特性和可靠性
Department of Electromachine Engineering, Jianghan University, Wuhan 430056, People's Republic of China Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Department of Electronic Science and Technology, School of Physics and Technology,Wuhan University, Wuhan, Hubei 430072, People's Republic of China;
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Department of Electronic Science and Technology, School of Physics and Technology,Wuhan University, Wuhan, Hubei 430072, People's Republic of China;
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Department of Electronic Science and Technology, School of Physics and Technology,Wuhan University, Wuhan, Hubei 430072, People's Republic of China;
Department of Electromachine Engineering, Jianghan University, Wuhan 430056, People's Republic of China;
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Department of Electronic Science and Technology, School of Physics and Technology,Wuhan University, Wuhan, Hubei 430072, People's Republic of China;
机译:通过掺氮改善具有HfLaO栅极电介质的非晶InGaZnO薄膜晶体管的电特性
机译:不同高k栅极电介质下的金属绝缘体 - 半导体和金属绝缘体 - 半导体 - 绝缘体 - 金属电容器的电气特性在半古典和量子机械模型中研究
机译:具有HfO_xN_y和HfO_2栅极电介质的非晶InGaZnO薄膜晶体管的比较研究
机译:具有高κHFO_XN_Y栅极电介质的无定形Ingazno MOS电容器的电气特性研究
机译:基于future的多金属高k栅极电介质的电气和材料特性,可用于未来的规模化CMOS技术:物理,可靠性和工艺开发。
机译:CF4等离子体处理HfO2栅电介质的非晶铟镓锌氧化物薄膜晶体管的电性能和可靠性提高
机译:用La掺入改善Ta2O5栅介质非晶InGaZnO薄膜晶体管的性能