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机译:使用La_2O_3栅极电介质可进一步缩小等效氧化物厚度在0.5 nm以下的栅极电介质的优势
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
rnFrontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
rnInterdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
rnInterdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
rnFrontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
rnFrontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
机译:稀土氧化物对La_2O_3栅极电介质的封盖效应,等效氧化物厚度缩小至0.5 nm
机译:ZrO_2 / La_2O_3高k电介质在锗上的原子层沉积达到0.5 nm等效氧化物厚度
机译:采用高k栅极电介质/金属栅极堆叠的覆盖层的厚度和材料对平坦带电压(V_(FB))和等效氧化物厚度(EOT)的依赖性,适用于先栅工艺应用
机译:氧化锆基栅极电介质的等效氧化物厚度小于1.0 nm,并具有使用氮化物栅极替代工艺的亚微米MOSFET的性能
机译:紧凑的栅极电容和栅极电流建模,可用于超薄(EOT〜1 nm及以下)二氧化硅和高kappa栅极电介质。
机译:高κ氧化物纳米带作为高迁移率顶栅石墨烯晶体管的栅极电介质
机译:高k栅极电介质向下一代的高级研究,等效栅极氧化层厚度小于1 nm
机译:喷射气相沉积(JVD)氧化硅/氮化物/氧化物薄膜(ONO)薄膜作为siC和GaN器件的栅极电介质的研究。