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机译:GaN高电子迁移率晶体管电降解的临界电压模型
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA United States 60 Vassar St., Rm. 39-615, Cambridge, MA 02139, United States;
rnMicrosystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA United States;
rnMicrosystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA United States;
rnMicrosystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA United States;
GaN; HEMT; critical voltage; degradation; reliability; modeling;
机译:GaN高电子迁移率晶体管电降解的临界电压
机译:GaN应力对关态偏压下Si上AlGaN / GaN高电子迁移率晶体管的阈值电压漂移的影响
机译:AlGaN / GaN高电子迁移率晶体管电降解的内在原因和内在原因
机译:陷阱对GaN高电子迁移率晶体管中用于降解的临界电压的影响
机译:通过基于Monte Carlo粒子的器件仿真对GaN高电子迁移率晶体管和热电子晶体管进行建模和设计。
机译:AlN /蓝宝石模板上的薄沟道AlGaN / GaN高电子迁移率晶体管中的高横向击穿电压
机译:GaN高电子迁移晶体管电解临界电压模型