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Promoting of charged-device model/electrostatic discharge immunity in the dicing saw process

机译:在划片过程中促进带电设备模型/抗静电放电

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摘要

Polyimide (PI) dielectric as a heatproof material is commonly employed in the integrated circuit (IC) industry. In the dicing saw assembly process, de-ionized (D.I.) water which has a higher resistance is rubbed on PI material. Hence, negative electrostatic charges are generated and accumulated on gate oxide capacitor or p-n junction capacitor in each IC chip. Since the discharge path is isolated during this time, sufficient cumulated charges through some feasible electrical path will damage the IC devices in this process step. Such damaged ICs exhibit function failure. A CO_2 gas flow under 2-3 kgw/cm~2 gas pressure to form a weak carbonic acid in water is efficient to conduct out the accumulated charges and adequately prevent the charge damage on IC devices. The final-test yield in sub-micron analog power complementary metal-oxide-semiconductor (CMOS) ICs was impressively increased from 80% to 98%.
机译:聚酰亚胺(PI)电介质作为耐热材料通常用于集成电路(IC)工业中。在划片锯组装过程中,将具有较高电阻的去离子(D.I.)水摩擦到PI材料上。因此,在每个IC芯片中的栅极氧化物电容器或p-n结电容器上产生并累积负电荷。由于在此期间放电路径是隔离的,因此通过某些可行的电气路径累积的足够电荷将在此处理步骤中损坏IC器件。这种损坏的IC会出现功能故障。在2-3 kgw / cm〜2的气压下,CO_2气流会在水中形成弱碳酸,这对于有效地累积电荷并充分防止IC器件的电荷损坏有效。亚微米模拟功率互补金属氧化物半导体(CMOS)IC的最终测试良率从80%惊人地提高到98%。

著录项

  • 来源
    《Microelectronics reliability》 |2010年第6期|839-846|共8页
  • 作者单位

    Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei, Taiwan Department of Electronic Engineering, Ming-Hsin University of Science and Technology, No. 1 Hsin-Hsing Road, Hsin-Fong, Hsin-Chu 304, Taiwan;

    rnDepartment of Mechatonic Technology, National Taiwan Normal University, 162, He-ping East Road, Section 1, Taipei 10610. Taiwan;

    rnDepartment of Electronic Engineering, Ming-Hsin University of Science and Technology, No. 1 Hsin-Hsing Road, Hsin-Fong, Hsin-Chu 304, Taiwan;

    rnInstitute of Mechatronic Engineering, National Taipei University of Technology, Taipei, Taiwan;

    rnInstitute of Mechatronic Engineering, National Taipei University of Technology, Taipei, Taiwan;

    rnDepartment of Electronic Engineering, Ming-Hsin University of Science and Technology, No. 1 Hsin-Hsing Road, Hsin-Fong, Hsin-Chu 304, Taiwan;

    rnInstitute of Mechatronic Engineering, National Taipei University of Technology, Taipei, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    complementary metal-oxide-semiconductor; electrostatic discharges; packaging; charged-device model; semiconductor-insulator;

    机译:互补金属氧化物半导体;静电放电;打包;充电设备型号;半导体绝缘体;

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