机译:具有交叉耦合SCR ESD保护方案的差分低噪声放大器的设计
Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan;
rnNanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan;
rnNanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan;
机译:CMOS低噪声放大器的紧凑型ESD保护设计
机译:在65nm CMOS中具有低NF和鲁棒ESD保护的60GHz低噪声放大器的设计
机译:具有RF ESD保护的60GHz低噪声放大器的设计与分析
机译:交叉耦合SCR的差分低噪声放大器的ESD保护设计
机译:氧化锌,薄膜,场效应晶体管的行为建模以及像素驱动器,模拟放大器和低噪声RF放大器电路的设计。
机译:宽带低温微波低噪声放大器
机译:具有EsD保护的低噪声放大器的新匹配方法