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Wafer-level bonding/stacking technology for 3D integration

机译:用于3D集成的晶圆级键合/堆叠技术

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摘要

Enhanced transmission speeds, lower power consumption, better performance, and smaller form factors are reported as advantages in many devices and applications when using 3D integration. One core technique for performing 3D interconnection is stacked bonding. In this paper, wafer-level bonding technologies are reviewed and described in detail, including bonding materials and bonding conditions. The corresponding 3D integration technologies and platforms developed world-wide are also organized and addressed.
机译:据报道,在使用3D集成时,在许多设备和应用程序中,提高的传输速度,更低的功耗,更好的性能和更小的外形是优势。执行3D互连的一项核心技术是堆叠键合。在本文中,将详细审查和描述晶圆级键合技术,包括键合材料和键合条件。还组织并介绍了在全球范围内开发的相应3D集成技术和平台。

著录项

  • 来源
    《Microelectronics reliability》 |2010年第4期|p.481-488|共8页
  • 作者

    Cheng-Ta Ko; Kuan-Neng Chen;

  • 作者单位

    Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;

    Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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