Extraction of VBIC model parameters for InGaAsSb DHBTs

摘要

This paper presents the extraction procedure of VBIC model parameters for an InGaAsSb DHBT, including the determination of thermal resistance. Unlike conventional GaAs-based HBTs in which thermal resistance can be measured with negligible avalanche effect, the InGaAsSb DHBT under test has both thermal and avalanche effects in the same low-biasing range. Using regular measurement techniques of thermal resistance induces a great error. We have developed a procedure to overcome the problem. The VBIC model showed excellent agreement with the experimental result.