首页> 外文期刊>Microelectronics reliability >Quantum circuit's reliability assessment with VHDL-based simulated fault injection
【24h】

Quantum circuit's reliability assessment with VHDL-based simulated fault injection

机译:基于基于VHDL的模拟故障注入的量子电路可靠性评估

获取原文
获取原文并翻译 | 示例
           

摘要

This paper presents a VHDL-based simulated fault injection (SF1) methodology for quantum circuits. The main objective is to attain a high error modeling capability at a technology independent level. For this purpose, gate level simulation models for quantum circuits have been developed using VHDL The proposed methodology relies on specific techniques inspired from the simulated fault injection techniques developed for classical CMOS circuits: saboteurs and mutants. In order to perform the simulation campaigns, a library of quantum gates and simulated fault injection components has been developed. The simulation results show that a wide range of quantum faults and error models has been addressed. Furthermore, a comparison between the two SFI techniques is presented.
机译:本文提出了一种基于VHDL的量子电路模拟故障注入(SF1)方法。主要目标是在技术独立的级别上获得高错误建模能力。为此,已使用VHDL开发了用于量子电路的门级仿真模型。所提出的方法依赖于为经典CMOS电路开发的模拟故障注入技术(破坏分子和突变体)启发而来的特定技术。为了执行仿真活动,已经开发了量子门和仿真故障注入组件的库。仿真结果表明,已经解决了各种各样的量子故障和误差模型。此外,介绍了两种SFI技术之间的比较。

著录项

  • 来源
    《Microelectronics reliability》 |2010年第2期|304-311|共8页
  • 作者单位

    Computer Science and Engineering Department, 'Politehnica' University of Timisoara, Timisoara, Romania;

    rnComputer Science and Engineering Department, 'Politehnica' University of Timisoara, Timisoara, Romania;

    rnComputer Science and Engineering Department, 'Politehnica' University of Timisoara, Timisoara, Romania;

    rnComputer Science and Engineering Department, 'Politehnica' University of Timisoara, Timisoara, Romania;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号