机译:Si衬底上SiGe外延层的纳米压痕行为评估
Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Mechanical Engineering, Chin-Yi University of Technology, Taichung 400, Taiwan;
Central Labs, Advanced Semiconducter Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, Nantze, Kaohsiung 811, Taiwan;
Central Labs, Advanced Semiconducter Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, Nantze, Kaohsiung 811, Taiwan;
Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
National Nano Device Laboratories Hsinchu 300, Taiwan;
Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
机译:通过分子束外延在Si(001)和Ge(001)衬底上生长的SiGe外延层的结构研究:Ⅱ-透射电子显微镜和原子力显微镜
机译:失配应变的符号对在Si和Ge衬底上生长的SiGe外延层中位错结构形成的影响
机译:通过分子束外延在Si(001)和Ge(001)衬底上生长的SiGe外延层的结构研究:Ⅰ-高分辨率x射线衍射和x射线形貌
机译:硅衬底上成分梯度外延SiGe层中的缺陷分布
机译:基于外延锗层的金属氧化物半导体器件,通过超高真空化学气相沉积直接在硅衬底上选择性生长
机译:Si(111)衬底和3C-SiC(111)外延层之间的错位界面的异常性质
机译:在块状单晶SiGe和Si衬底上的UHV / CVD SiGe外延层的生长和表征