Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences

摘要

This paper presents an original study about the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences (EMI) on a nanometric NMOS transistor, which is one of the major sources of failures in analog circuits. Measurements and simulations based on a simple model (Sakurai-Newton model) of fresh and stressed transistors are presented and show significant variations of EMI-induced DC shifts of drain current.