Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs

摘要

IGBT power components are more and more used in atmospheric and space applications. Thus, it is essential to study the influence of the natural radiation environment (NRE) on the electrical behavior of planar and trench IGBTs. 2-D numerical simulations are performed to define the sensitive volume and triggering criteria of SEBs for planar and trench IGBTs for different configurations of ionizing tracks. The analysis of the results allows a better understanding of the SEB mechanism in each structure and comparing the behavior and the robustness of these two technologies under heavy-ion irradiation.