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首页> 外文期刊>Microelectronics reliability >Cratering response method to study the effect of ultrasonic energy on Cu-wire bonding quality
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Cratering response method to study the effect of ultrasonic energy on Cu-wire bonding quality

机译:用于研究超声波能量对铜线键合质量影响的弯曲反应方法

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摘要

The paper presents a method for SO um Cu-wire bonding to study sub-percentage assembly yield loss due to cratering, so called "in-process" cratering. Test vehicle is an audio amplifier device assembled in a surface mount power package (HSOP). The method is based on high temperature aging followed by wire pull testing and has successfully been applied to determine the upper limit of the bond energy process window. After implementation in production, the shift to lower bond energy was controlled via regular ball shear production monitor and "in-process" cratering was no longer observed.
机译:本文提出了一种用于SO um铜线键合的方法,以研究由于缩孔(所谓的“过程中”缩孔)而导致的次级组件装配良率损失。测试车辆是组装在表面安装电源封装(HSOP)中的音频放大器设备。该方法基于高温老化,然后进行拉线测试,并已成功应用于确定键合能工艺窗口的上限。在生产中实施后,通过常规的球形剪切生产监控器控制了向较低键能的转移,并且不再观察到“过程中”缩孔。

著录项

  • 来源
    《Microelectronics reliability》 |2011年第11期|p.1865-1868|共4页
  • 作者单位

    NXP Semiconductors, Cerstweg2. 6534 AE Nijmegen, The Netherlands;

    NXP Semiconductors, Cerstweg2. 6534 AE Nijmegen, The Netherlands;

    NXP Semiconductors, Cerstweg2. 6534 AE Nijmegen, The Netherlands;

    NXP Semiconductors, No. 10, Jing 5th Road, N.E.P2. Kaohsiung 811. Taiwan, ROC;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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