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机译:塑料封装的GaN-on-Si HEMT的热优化
Department of Electrical Engineering, K.U. Leuven, Kasteeipark Arenberg 10, 3001 Leuven, Belgium,imec vzw, Kapeldreef 75, 3001 Leuven, Belgium;
Department of Electrical Engineering, K.U. Leuven, Kasteeipark Arenberg 10, 3001 Leuven, Belgium;
imec vzw, Kapeldreef 75, 3001 Leuven, Belgium;
imec vzw, Kapeldreef 75, 3001 Leuven, Belgium;
Department of Electrical Engineering, K.U. Leuven, Kasteeipark Arenberg 10, 3001 Leuven, Belgium,imec vzw, Kapeldreef 75, 3001 Leuven, Belgium;
imec vzw, Kapeldreef 75, 3001 Leuven, Belgium,Department of Metallurgy and Materials Engineering, K.U. Leuven, Kasteeipark Arenberg 44, 3001 Leuven, Belgium;
机译:大功率GaN-on-Si高电子迁移率晶体管(HEMT)的新颖封装设计
机译:用于InAlN / GaN-on-Si HEMT的低热预算Hf / Al / Ta欧姆接触,具有更高的击穿电压
机译:通过瞬态热测试评估封装的GaN HEMT共源共栅功率开关的热性能
机译:高压GaN-on-Si肖特基屏障二极管(SBD)的热表征,用于设计电动HEMT的片上热关断电路
机译:加速热循环和功率循环下带鸥翼引线的四方扁平封装的焊点设计优化
机译:用于脉冲操作的AlGaN / GaN HEMT热设计优化的瞬态仿真
机译:对热优化IC设计需要全芯片和封装热模型