A study of SiC Power BJT performance and robustness

摘要

This paper proposes an investigation of 1200 V rated transistors with the twofold purpose of assessing their performance and robustness under representative operational conditions and of extracting guidelines for the design of reliable multi-chip power electronics modules based on SiC technology. It includes a thorough analysis of the devices steady-state and switching characteristics, as well as the investigation of short-circuit events. Taking into account operational conditions of real applications, this study considers the dependence on ambient temperature, bias conditions and driver circuit parameters.