Application of transient interferometric mapping method for ESD and latch-up analysis

摘要

Transient Interferometric Mapping (TIM) tools are reviewed from a perspective of their particular application area and comparison to other transient optical analysis techniques. TIM studies on trigger behavior, current filamentation and failure modes in BCD DMOS and ESD protection devices under TLP and system-level-ESD - like pulses are overviewed. TIM analysis of CMOS ESD protection devices, in particular study of on-state spreading effect in 90 nm SCRs is also presented. Furthermore TIM investigations of substrate currents and parasitic SCR paths during transient latch-up events in 90 nm CMOS and BCD technology test structures and products are reviewed. Finally TIM studies of ESD and short-time self-heating phenomena in GaN HEMTs and lasers are also briefly mentioned.