S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects

摘要

This paper reports comparative study of technology reliability after accelerated ageing tests under various conditions (electrical and/or thermal stress) and RF life-tests reliability with pulsed bench for radar applications in S-band. It is important to understand the effects of the reliability degradation mechanisms on the S-parameters and in turn on static and dynamic parameters. The analysis of the experimental results is presented and the physical processes responsible for the observed degradation at different stress conditions are studied by means of 2D ATLAS-SILVACO simulations. S-parameters degradation of hot-carrier stressed n-MOS transistors can be explained by the transcon-ductance and miller capacitance shifts, which are resulted from the interface state generation (traps), which results in a build up of negative charge at Si/SiO_2 interface. More interface states are created due to a located maximum impact ionization rate at the gate edge. From our experimental results, hot electron induced RF performance degradation should be taken into consideration in the design of the power RF MOS devices.