An original DoE-based tool for silicon photodetectors EoL estimation in space environments

摘要

In our previous works we have demonstrated that Design of Experiments (DoE) is an innovative methodology defining optimized irradiation test plan and particularly valuable for the space qualification of silicon photodetectors. In particular, it provided us with the degradation model of photocurrent, darkness current, and spectral responsivity of silicon based phototransistors arrays with respect to the Total Ionizing Dose (TID) and to the Displacement Damage Dose (DDD), over a wide range of space-mission profiles. In this paper, we will summarize at first main results obtained thanks to the DoE methodology. Then we present how we can easily obtain, by exploiting DoE collected data, End-of-Iife predictions of such devices with a reduced number of experiments, with a small batch of devices, and in relatively short time.