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机译:Sn-Ag-Cu的晶体取向对倒装芯片电迁移的影响
Graduate School of Engineering. Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan;
Fusion Technology Lab., Hoseo University, Asan 336-795, Republic of Korea;
Institute of Science and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan;
Institute of Science and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan;
KYOCERA SIC Technologies Corporation, Advanced Packaging Laboratory, Ichimiyake 656, Yasu, Shiga 520-2362, Japan;
ESPECCORP, Electronic Device System Sales Engineering Department. Tehjinbasi 3-5-6, Kita Ward, Osaka 530-8550, Japan;
Senju Metal Industry Co., Ltd., Adachi Ward 23, Senjuhasidocho, Tokyo 270-0021. Japan;
机译:Sn的晶体取向对Cu / Sn-Ag-Cu / Cu球形接头电迁移的影响
机译:低电流应力下Sn-Ag-Cu倒装芯片焊点中铜重量的电迁移可靠性
机译:电迁移损伤对Sn-Ag-Cu焊点中Sn晶粒取向的依赖性
机译:试验条件对SN-AG-CU倒装芯片焊料互连电迁移可靠性的影响
机译:热电迁移对倒装芯片无铅焊点中铜溶解和金属间化合物形成的影响
机译:基于离散空隙形成的倒装芯片焊点失效的电迁移机理
机译:基于离散空隙形成的倒装芯片焊点失效的电迁移机制