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The effect of surface modification and catalytic metal contact on methane sensing performance of nano-ZnO-Si heterojunction sensor

机译:表面改性和催化金属接触对纳米ZnO-Si异质结传感器甲烷传感性能的影响

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摘要

A sol-gel derived Nanocrystalline Nanoporous ZnO-Si heterojunction device was fabricated. Two types of heterojunction structure, one with as deposited ZnO film and another with surface modification (by palladium nanoclusters), via a simple aqueous route, were investigated for methane sensing. Three configurations with different contact metals (Pd-Ag contact on both sides/Pd-Ag on ZnO side and Au on Si / and Au on both sides of the junction) were studied. The heterojunctions were investigated at different operating temperatures (50-300 ℃) and at different operating voltages (1-5 V) for varying concentrations of methane (0.01%, 0.05%, 0.1%, 0.5%, 1.0% and 1.5%). The surface modified sensors offered much lower operating temperature than that of unmodified ones. It was observed that the Pd modified device with Pd-Ag (70%) contacts on both sides offered faster response (~23 s) with a higher response magnitude (~73%) compared to the unmodified sensor of similar configuration (response time ~28 s and response magnitude ~63%). It was further revealed that the Pd surface modification has a more significant effect on the devices with noncatalytic contact compared to their counterpart with catalytic contact.
机译:制备了溶胶-凝胶衍生的纳米晶纳米多孔ZnO-Si异质结器件。研究了两种类型的异质结结构,一种具有沉积的ZnO膜,另一种具有表面修饰(通过钯纳米簇),通过一种简单的水相路线进行了甲烷感测。研究了三种具有不同接触金属的结构(两侧为Pd-Ag接触/ ZnO侧为Pd-Ag,结的两侧均为Si /和Au的Au)。对于不同浓度的甲烷(0.01%,0.05%,0.1%,0.5%,1.0%和1.5%),在不同的工作温度(50-300℃)和不同的工作电压(1-5 V)下研究了异质结。经表面修饰的传感器提供的工作温度要比未经修饰的传感器低得多。观察到,与类似配置的未修改传感器(响应时间〜)相比,两侧均带有Pd-Ag(70%)触点的Pd改进型器件提供更快的响应(〜23 s)和更高的响应幅度(〜73%)。 28 s,响应幅度〜63%)。进一步揭示,与具有催化接触的器件相比,Pd表面改性对具有非催化接触的器件的影响更大。

著录项

  • 来源
    《Microelectronics reliability 》 |2011年第12期| p.2185-2194| 共10页
  • 作者单位

    Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, Shibpur 711103, Howrah, West Bengal India;

    Department of E&TCE, ITER, SOA University, Bhubaneswar, Orissa 751 030, India;

    IC Design and Fabrication Center, Department ETCE, Jadavpur University, Kolkata 700 032, West Bengal, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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