机译:带有反JFET注入的VDMOS的关态漏极击穿机制
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;
Canaan Microelectronics Corp. Ltd., Room 1604, Hart Avenue Plaza, 5-9 Hart Avenue, Tsimshatsui, Kowloon, Hong Kong;
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;
机译:利用AlGaN / GaN高电子迁移率晶体管中的场板和低密度漏极改善截止态击穿电压
机译:AlGaN / GaN功率HEMT的关态降解:随时间变化的漏极-源极击穿的实验演示
机译:质子辐照对AlGaN / GaN高电子迁移率晶体管截止态漏极击穿电压的影响
机译:AlGaN / GaN HEMT中缓冲陷阱对栅极和漏极之间的断态击穿影响的理论分析
机译:散装水溶液中双脉冲激光诱导击穿光谱的增强机理和激光诱导击穿光谱的定量测量。
机译:具有改善的漏极电流密度和高击穿电压的高性能AlGaN双通道HEMT
机译:洞察电力GaN Hemts中的禁区击穿机制