On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP)

摘要

We present a new method for the on-wafer-characterisation for the reverse recovery behaviour of integrated diodes, which can perform on-wafer automated measurements over a wide range of different bias and pulsing conditions. The system is based on a Transmission-Line-Pulsing (TLP) technique and can be used to characterise diodes down to the regime of 10 ns, using pulses of several hundred volts and several Ampere peak current.