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The influence of inhomogeneous trap distribution on results of DLTS study

机译:陷阱分布不均对DLTS研究结果的影响

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摘要

A model is developed to describe how a narrow distribution of deep traps adjacent to quantum dots (QDs) influences the trap-related signals measured by frequency scanned deep level transient spectroscopy (FS-DLTS). By comparison with experiment, it is demonstrated that traps with a steep concentration gradient, positioned in the so called transition layer close to the edge of the depletion region ("/i-effect"), have a strong influence on DLTS signal amplitudes. This is manifested by an extreme sensitivity to the change in the Fermi-level position when temperature is varied.
机译:开发了一个模型来描述与量子点(QD)相邻的深陷阱的窄分布如何影响通过频率扫描深层瞬态光谱法(FS-DLTS)测量的陷阱相关信号。通过与实验的比较,证明了具有陡峭浓度梯度的陷阱位于靠近耗尽区边缘的所谓过渡层中(“ / i效应”),对DLTS信号幅度有很大影响。当温度变化时,对费米能级位置的变化极为敏感,这表明了这一点。

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  • 来源
    《Microelectronics reliability 》 |2011年第7期| p.1159-1161| 共3页
  • 作者单位

    Institute of Electron Technology, Department of Analysis of Semiconductor Nanostructures, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;

    Institute of Electron Technology, Department of Analysis of Semiconductor Nanostructures, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;

    Institute of Electron Technology, Department of Analysis of Semiconductor Nanostructures, Al. Lotnikow 32/46, 02-668 Warsaw, Poland,Chalmers University of Technology, Department of Microtechnology and Nanoscience, SE-412 96 Goeteborg, Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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