MISFET structures with barium titanate as a dielectric layer for application in memory cells

摘要

This work shows investigations of La_2O_3 containing BaTiO_3 thin films deposited on Si substrates by Radio Frequency Plasma Sputtering (RF PS) of sintered BaTiO_3 + La_2O_3 (2 wt.%) target. Round, aluminum (Al) electrodes were evaporated on top of the deposited layers. Thus, metal-insulator-semiconductor (MIS) structures were created with barium titanate thin films playing the role of an insulator. The MIS structures enabled a subsequent electrical characterization of the studied film by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Several electronic parameters, i.e., ε_(ri), ρ, V_(FB), △V_H were extracted from the obtained characteristics. Moreover, the paper describes technology process of MISFETs fabrication and possibility of their application as memory cells. The influence of voltage stress on transfer and output I-V characteristics of the transistors are presented and discussed.