机译:全方位栅纳米线FET,鳍式FET和完全耗尽的SOI FET的低温电特性比较
Frontier Research Center, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
CEA-LETl, MINATEC cumpus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;
Frontier Research Center, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
IMEP-IAHC. INPC-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble Cedex I, France;
CEA-LETl, MINATEC cumpus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;
机译:圆柱型全栅极双硅纳米线MOSFET(TSNWFET)的温度相关特性
机译:全能栅极纳米线MOSFET对工艺变化的敏感性-与多栅极MOSFET的比较
机译:同轴纳米线FET的电学特性的分析模型
机译:自对准(SA)全方位栅(GAA)硅纳米线MOSFET(SNWFET)的制造和电特性
机译:用于DNA测序的门 - 全部纳米线MOSFET
机译:P型门 - 全面硅纳米线MOSFET的低温传输特性
机译:全耗尽硅 - 绝缘体(SOI)G 4 -FET和门 - 全周(GAA)MOSFET的性能分析