NBTI reliability on high-/< metal-gate SiGe transistor and circuit performances

摘要

Negative-bias temperature instability (NBTI) on high-k metal-gate SiCe p-channel MOSFETs has been examined. SiGe p-MOSFETs shows reduced interface states and enhanced NBTI reliability compared to their Si p-channel control devices as evidenced by experimental data. Impact of NBTI reliability on digital and RF circuits has been also examined using extracted fresh and stressed BS1M4 model parameters in circuit simulation. High-k metal-gate SiGe pMOSFETs demonstrate less inverter pull-up delay, smaller noise figure of a cascode low-noise amplifier, and larger output power and power-added efficiency than their Si counterparts when subject to NBTI stress.