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Influence of P3HT:PCBM blend preparation on the active layer morphology and cell degradation

机译:P3HT:PCBM共混物的制备对活性层形态和细胞降解的影响

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摘要

Polymeric solar cells have attracted much attention during the last years due to their lower fabrication cost and possibility of using flexible substrates. However, their efficiency is usually less than 5%. Among factors affecting polymeric solar cells efficiency, the active layer morphology related to blend preparation and annealing, is one of the most important. In this work we analyze the behavior of solar cells based on poly(3-hexylthiophene):[6,6]-phenyl-C_(61)-butyric acid methyl ester, P3HT:PCBM blends prepared under different conditions. Basic parameters are extracted from measured characteristics in dark and under illumination, while modeling is used to understand the mechanisms involved in the device behavior and during its degradation in ambient conditions, which are associated to the active layer characteristics.
机译:聚合太阳能电池由于其较低的制造成本和使用柔性基板的可能性而在最近几年引起了很多关注。但是,它们的效率通常低于5%。在影响聚合物太阳能电池效率的因素中,与共混物制备和退火有关的活性层形态是最重要的之一。在这项工作中,我们分析了在不同条件下制备的基于聚(3-己基噻吩):[6,6]-苯基-C_(61)-丁酸甲酯,P3HT:PCBM共混物的太阳能电池的性能。基本参数是从黑暗和光照条件下的测量特性中提取的,而建模则用于了解器件行为及其在环境条件下的退化过程中所涉及的机制,这些机制与有源层的特性有关。

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  • 来源
    《Microelectronics reliability 》 |2011年第3期| p.597-601| 共5页
  • 作者单位

    Section de Electronica del Estado Solido, Depto. Ingenieria Electrica, CINVESTAV-IPN, Av. IPN No 2508, Apto. Postal 14-740, C.P. 07360, Mexico DF, Mexico;

    Section de Electronica del Estado Solido, Depto. Ingenieria Electrica, CINVESTAV-IPN, Av. IPN No 2508, Apto. Postal 14-740, C.P. 07360, Mexico DF, Mexico;

    Section de Electronica del Estado Solido, Depto. Ingenieria Electrica, CINVESTAV-IPN, Av. IPN No 2508, Apto. Postal 14-740, C.P. 07360, Mexico DF, Mexico;

    Benemerita Universidad Autonoma de Puebla, CIDS-ICUAP, Ciudad Universitaria, Edif. I03D, Puebta, Mexico;

    Departament d'Enginyeria Electronica Electrica i Automatica, Universitat Rovira i Virgili, Avda. Paisos Catalans 26, 43007 Tarragona, Spain;

    Departament d'Enginyeria Electronica Electrica i Automatica, Universitat Rovira i Virgili, Avda. Paisos Catalans 26, 43007 Tarragona, Spain;

    Departament d'Enginyeria Electronica Electrica i Automatica, Universitat Rovira i Virgili, Avda. Paisos Catalans 26, 43007 Tarragona, Spain;

    Departament d'Enginyeria Electronica Electrica i Automatica, Universitat Rovira i Virgili, Avda. Paisos Catalans 26, 43007 Tarragona, Spain;

    lns. Chem Res. Catalonia ICIQ, Tarragona 43007, Spain;

    lns. Chem Res. Catalonia ICIQ, Tarragona 43007, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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