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Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling

机译:超声波键合高纯铝线在大范围热循环过程中的组织演变

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摘要

This paper concerns the reliability of ultrasonically bonded high purity thick aluminium wires at elevated temperature. To date, the evolution of the microstructure of wire bonds during thermomechanical exposure and its influence on reliability have not been fully characterised and understood, particularly as they pertain to thermal cycling regimes which exceed 125 ℃. Shear testing, indentation hardness and fine-scale microstructural data are reported here which show that the rate of wear-out can be influenced not only by the thermal cycling range (AT), but more importantly by the maximum temperature and duration to which bonds are exposed. There is evidence that significant annealing occurs during thermal cycling regimes with high T_(max) values, which results in the removal of some of the damage accumulated and a reduction in the rate of crack propagation. The rate of bond degradation is also found to be faster for 99.99% (4 N) than 99.999% (5 N) pure Al wires. Analysis of the two wire compositions after thermal cycling suggests that this difference could be attributable to a difference in their creep resistance. In conclusion, our findings suggest that high purity Al wire bonds may be suitable for operation at temperatures which exceed 125 ℃.
机译:本文涉及在高温下超声粘合高纯度粗铝线的可靠性。迄今为止,尚未充分表征和理解热机械暴露过程中焊线微观结构的演变及其对可靠性的影响,特别是涉及超过125℃的热循环过程时。此处报道了剪切测试,压痕硬度和精细的微观结构数据,这些数据表明磨损率不仅受热循环范围(AT)的影响,而且更重要的是受最高温度和键合时间的影响。裸露。有证据表明,在具有高T_(max)值的热循环过程中会发生明显的退火,这导致一些累积损伤的消除和裂纹扩展速率的降低。还发现,对于99.99%(4 N)而言,键的降解速率要比99.999%(5 N)的纯铝丝更快。热循环后对两根导线成分的分析表明,这种差异可能归因于其抗蠕变性的差异。总之,我们的发现表明,高纯度的铝丝键合可能适合在超过125℃的温度下使用。

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  • 来源
    《Microelectronics reliability》 |2011年第2期|p.406-415|共10页
  • 作者单位

    Department of Electrical & Electronic Engineering, The University of Nottingham, University Park, Nottingham NC7 2RD, UK;

    Department of Electrical & Electronic Engineering, The University of Nottingham, University Park, Nottingham NC7 2RD, UK;

    Department of Electrical & Electronic Engineering, The University of Nottingham, University Park, Nottingham NC7 2RD, UK;

    Department of Electrical & Electronic Engineering, The University of Nottingham, University Park, Nottingham NC7 2RD, UK;

    Department of Materials, University of Oxford, Parks Road. Oxford 0X1 3PH, UK;

    Department of Electrical & Electronic Engineering, The University of Nottingham, University Park, Nottingham NC7 2RD, UK;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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