Enhanced power cycling capability of SiC Schottky diodes using press pack contacts

摘要

This work presents experimental comparative results of power cycling capability of SiC Schottky diodes performed on various encapsulation technologies. For the analysis, we used an original concept based on the device self-heating and a dedicated workbench. The aim of our studies is to obtain reliable Silicon Carbide (SiC) devices able to operate at temperatures over 300 ℃. Various technological approaches have to be considered, mainly on the interconnection technique and metallization layers in order to improve the temperature operation of the power diodes. Our investigation showed the most suitable packaging technology for SiC devices sustaining high temperature swing. Special attention is dedicated to the press-pack contact.