Infrared Thermography application to functional and failure analysis of electron devices and circuits

摘要

In this paper the principal and more important application of Infrared Thermography are discussed. In particular the application of this experimental technique, both in its transient and steady-state mode of operation, are reported and illustrated through a broad set of experiments and examples. Functional application to the characterization of VLSI devices, application to the failure analysis of large area power devices, current monitoring in state-of-art heterojunction and organic devices prove the high potential of this technique.