Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs

摘要

In this paper we introduce a novel simulation approach for the analysis of statistical variability in the trap-assisted tunnelling (TAT) gate leakage current in ultra-scaled MOSFETs. It accounts for the stochastic nature of trapping/emission dynamics underlying TAT current, and enables the simulation of TAT in the time domain. We demonstrate that random dopant fluctuations induce significant variability in the TAT gate leakage and investigate the details of its origin. Finally we present TAT current characteristics for different dopants configurations.