Power semiconductor module using a bonding film with anisotropic thermal conduction

摘要

A power semiconductor module using a bonding film with anisotropic thermal conduction has been studied. The bonding film consists of polyamide with a low Young's modulus and Z-axis-oriented fine graphite fibers. All the materials of this device, including the insulated substrate and base plate, have low coefficients of thermal expansion. The bonding film is inserted between the baseplate and an aluminum active heatsink. No significant changes in the thermal resistance or cross-sectional microscopy images were found after thermal cycling tests.